Synthesis and Characterization of Spintronic Material (Hg0.8Cd0.2 Te) by Solid State Reaction

Noor ul Huda Khan Asghar, Muhammad Shahzad Shifa, Zaheer Abbas Gilani, Adnan Ali, Khalid Mahmood, Muhammad Nuaman Usmani

Abstract


Poly-crystalline Spintronics material (Hg0.8Cd0.2Te) was synthesized through solid state reaction method. The sample with the diameter of = 5 mm and thickness T = 1.5 mm was set via uni-axial persistent technique. Sample was melted at 800 0C up to 2 h. The sample was characterized through scanning electron microscopy (SEM), Energy dispersive x-rays (EDX), and X-rays diffraction (XRD) studies to confirm the surface morphology and structural analyses. From XRD results it was confirmed that sample structure was cubical. Lattice parameters was determined by XRD 0.65 nm of (Hg0.8 Cd0.2Te). Using crystallography method the miller indices (hkl) was also studied. The planes were observed (110), (210) and (331). From EDX results Te 42.82%, Cd 19.95%, Al 1.39%, O2 32.06 % and C 3.79% were found for 2 h heat treatment at 800 0C.

Keywords


II–VI Materials; Sintering; Scanning Electron Microscopy; EDX; Grain Size

Full Text:

PDF

References


Alcock NW. (1972). Secondary bonding to nonmetallic elements. Advances in Inorganic Chemistry and

Radiochemistry 15:1-58.

Asghar NH, Asghar M, Awan M. (2011). Solid State Synthesis and Characterization of Spintronics

Material Cd0. 55 Hg0. 45 Te. Applied Mechanics and Materials 44-47: 2299-2306

Awschalom DD, Flatté ME, Samarth N. (2002). Spintronics. Scientific American 286(6):66-73.

Awschalom DD, Kikkawa JM. (1999). Electron spin and optical coherence in semiconductors. Physics

Today 52:33-39

Capper P. (1994). Properties of narrow gap cadmium-based compounds. Optoelectronics, IEE

Proceedings, Institution of Engineering and Technology (IET), vol. 142 issue 006, pp. 618.

Hanson R, Kouwenhoven LP, Petta JR, Tarucha S, L. Vandersypen MK. (2007). Reviews of Modern

Physics 79(4):1217.

Kunitomi N, Hamaguchi Y, Anzai S. (1963). Fictitious Transitions of the Crystallographic Structure in

Manganese Telluride at High Temperatures. Journal of the Physical Society of Japan 18(5):744-744.

Ladd J, Orville-Thomas W, Cox BC. (1964). Molecular parameters and bond structure—III. Carbonoxygen

bonds. Spectrochimica Acta 20(12):1771-1780.

Nakamura S, Mukai T, Senoh M. (1991). High-power GaN pn junction blue-light-emitting diodes.

Japanese Journal of Applied Physics 30(12A):2390-2392.

Reddy K, Madhusudhana Rao N, Reddy DR, Reddy BK. (2005). Ac susceptibility and ESR studies on

vapour phase grown Cd 1− x Mn x Te crystals. Spectrochimica Acta Part A: Molecular and Biomolecular

Spectroscopy 61(13):3056-3060.

Sun Z, Wu W, Li HH. (2013). Cross-layer racetrack memory design for ultra-high density and low power

consumption. In Proceedings of the 50th Annual Design Automation Conference ACM, pp. 1–6.

Tasiopoulos AJ, Troganis AN, Evangelou A, Raptopoulou CP, Terzis A, Deligiannakis Y, Kabanoset

TA. (1999). Synthetic Analogues for Oxovanadium (IV)–Glutathione Interaction: An EPR, Synthetic and

Structural Study of Oxovanadium (IV) Compounds with SulfhydrylContaining

Pseudopeptides and

Dipeptides. Chemistry-A European Journal 5(3):910-921.



Contacts | Feedback
© 2002-2014 BUITEMS