Study of Current-voltage Characteristic Using Deep Level Transient Spectroscopy Technique of Schottky Diode Made of SIC

H.M.Noor Asghar, Zaheer Abbas Gilani, Irshad Ahmad, Shuang Shi, Yi Tan

Abstract


Current spectroscopy was employed to investigate Silicon Carbide (SiC). DLTS standard setup was performed to study the current voltage measurement of respective schottky diode. The current voltage measurement of SiC schottky diode was carried out at different temperatures keeping the same biasing setting. From these measurements the behavior of the material is: The ideality factor of SiC at room temperature was found to be 1.9894 that was little bit improved i.e. ~ 1.7268 when temperature was increased ~400K. However values increased with decrease in temperature for the material. The higher value of ideality factor is attributed to high diffusion or tunneling current. The barrier height of SiC at room temperature was calculated as 0.995eV which remained nearly constant with increase in temperature. The change in the barrier height is related to the effective leakage current at high temperature. Reverse saturation current calculated for SiC at room temperature was 6.5706 ×10-13A. Its value increased up to 1.72×10-9A at 400K.

Keywords


Semiconducting Silicon Carbide materials; I-V characteristics; Deep level transient spectroscopy (DLTS) of the material; Schottky diode;

Full Text:

PDF

References


Ahmad WQ and Asghar M. (2012).

Characterization of Sic by Means of C-V

Measurement of Respective Schottky Diode

by DLTS. Journal of Applied and Emerging

Sciences 3(1):25-29.

· Ciechonski R. (2005). Device Characteristics

of Sublimation Grown 4h-Sic Layers:

Linkopings University.

· Duman S, Gur E, Dogan S and Tüzemen S.

(2009). Temperature Dependent Capacitance

and Dlts Studies of Ni/N-Type 6h-Sic Schottky

Diode. Current Applied Physics 9(6):1181-

· Elhaji A, Evans-Freeman J, El-Nahass M,

Kappers M and Humphries C. (2014).

Electrical Characterization and Dlts Analysis

of a Gold/N-Type Gallium Nitride Schottky

Diode. Materials Science in Semiconductor

Processing, 1794-99.

· Gilani ZA, Awan M, Ahmad I and Tan Y.

(2015). Characterization of Ingan by Means of

I–V Measurements of Respective Light-

Emitting Diode (Led) by Dlts. Arabian Journal

for Science and Engineering 40(1):263-268.

· Gur E, Zhang Z, Krishnamoorthy S, Rajan S

and Ringel S. (2011). Detailed

Characterization of Deep Level Defects in

Ingan Schottky Diodes by Optical and Thermal

Deep Level Spectroscopies. Applied Physics

Letters 99(9): 092109.

· Lebron-Velilla RC, Schwarze GE, Gardner BG

and Adams Jr. (2004). Silicon Carbide Diodes

Characterization at High Temperature and

Comparison with Silicon Devices.



Contacts | Feedback
© 2002-2014 BUITEMS